Cite
Scalable CGeSbTe-based phase change memory devices employing U-shaped cells.
MLA
Park, J. H., et al. “Scalable CGeSbTe-Based Phase Change Memory Devices Employing U-Shaped Cells.” Thin Solid Films, vol. 634, July 2017, pp. 141–46. EBSCOhost, https://doi.org/10.1016/j.tsf.2017.04.048.
APA
Park, J. H., Kim, J. H., Ko, D.-H., Wu, Z., Ahn, D. H., Park, S. O., & Hwang, K. H. (2017). Scalable CGeSbTe-based phase change memory devices employing U-shaped cells. Thin Solid Films, 634, 141–146. https://doi.org/10.1016/j.tsf.2017.04.048
Chicago
Park, J.H., J.H. Kim, D.-H. Ko, Z. Wu, D.H. Ahn, S.O. Park, and K.H. Hwang. 2017. “Scalable CGeSbTe-Based Phase Change Memory Devices Employing U-Shaped Cells.” Thin Solid Films 634 (July): 141–46. doi:10.1016/j.tsf.2017.04.048.