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Electron-Doped 1T-MoS2 via Interface Engineering for Enhanced Electrocatalytic Hydrogen Evolution.
- Source :
-
Chemistry of Materials . Jun2017, Vol. 29 Issue 11, p4738-4744. 7p. 1 Color Photograph. - Publication Year :
- 2017
-
Abstract
- Designing advanced electrocatalysts for hydrogen evolution reaction is of far-reaching significance. Active sites and conductivity play vital roles in such a process. Herein, we demonstrate a heteronanostructure for hydrogen evolution reaction, which consists of metallic 1T-MoS2 nanopatches grown on the surface of flexible single-walled carbon nanotube (1T-MoS2/SWNT) films. The simulated deformation charge density of the interface shows that 0.924 electron can be transferred from SWNT to 1T-MoS2, which weakens the absorption energy of H atom on electron-doped 1T-MoS2, resulting in superior electrocatalytic performance. The electron doping effect via interface engineering renders this heteronanostructure material outstanding hydrogen evolution reaction (HER) activity with initial overpotential as small as approximately 40 mV, a low Tafel slope of 36 mV/dec, 108 mV for 10 mA/cm2, and excellent stability. We propose that such interface engineering could be widely used to develop new catalysts for energy conversion application. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTROCATALYSTS
*HYDROGEN
*NANOTUBES
*ELECTRONS
*ENGINEERING
Subjects
Details
- Language :
- English
- ISSN :
- 08974756
- Volume :
- 29
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Chemistry of Materials
- Publication Type :
- Academic Journal
- Accession number :
- 123570996
- Full Text :
- https://doi.org/10.1021/acs.chemmater.7b00446