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Electron-Doped 1T-MoS2 via Interface Engineering for Enhanced Electrocatalytic Hydrogen Evolution.

Authors :
Qin Liu
Qi Fang
Wangsheng Chu
Yangyang Wan
Xiuling Li
Weiyu Xu
Habib, Muhammad
Shi Tao
Yu Zhou
Daobin Liu
Ting Xiang
Adnan Khalil
Xiaojun Wu
Chhowalla, Manish
Ajayan, Pulickel M.
Li Song
Source :
Chemistry of Materials. Jun2017, Vol. 29 Issue 11, p4738-4744. 7p. 1 Color Photograph.
Publication Year :
2017

Abstract

Designing advanced electrocatalysts for hydrogen evolution reaction is of far-reaching significance. Active sites and conductivity play vital roles in such a process. Herein, we demonstrate a heteronanostructure for hydrogen evolution reaction, which consists of metallic 1T-MoS2 nanopatches grown on the surface of flexible single-walled carbon nanotube (1T-MoS2/SWNT) films. The simulated deformation charge density of the interface shows that 0.924 electron can be transferred from SWNT to 1T-MoS2, which weakens the absorption energy of H atom on electron-doped 1T-MoS2, resulting in superior electrocatalytic performance. The electron doping effect via interface engineering renders this heteronanostructure material outstanding hydrogen evolution reaction (HER) activity with initial overpotential as small as approximately 40 mV, a low Tafel slope of 36 mV/dec, 108 mV for 10 mA/cm2, and excellent stability. We propose that such interface engineering could be widely used to develop new catalysts for energy conversion application. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08974756
Volume :
29
Issue :
11
Database :
Academic Search Index
Journal :
Chemistry of Materials
Publication Type :
Academic Journal
Accession number :
123570996
Full Text :
https://doi.org/10.1021/acs.chemmater.7b00446