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Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory.
- Source :
-
Microelectronic Engineering . Jun2017, Vol. 178, p122-124. 3p. - Publication Year :
- 2017
-
Abstract
- In this work, we observe the switching mechanisms in non-filamentary resistive switching (RS) devices, investigated through a nanosized conductive tip used as a movable (virtual) top-electrode. The correlation between different conductive states of vacancy-modulated conductive oxide (VMCO) cells and the conductive domains in thin TiO 2 is provided. We observe the appearance of uniformly distributed conductive spots whose conductance can be reversibly modulated using a scanning biased conductive tip. Although TiO 2 has been often used as a material system for filamentary RS, these results clearly demonstrate the non-filamentary switching nature of valence change memory (VCM) cells. This supports their strong potentials in the area of applications where aggressive scaling and low-current operation is required. [ABSTRACT FROM AUTHOR]
- Subjects :
- *OXIDES
*COMPUTER storage devices
*FLASH memory
*RESISTIVE force
*ELECTRODES
Subjects
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 178
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 123629094
- Full Text :
- https://doi.org/10.1016/j.mee.2017.04.046