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Fabrication of high-performance 370 nm ultraviolet light-emitting diodes
- Source :
-
Journal of Crystal Growth . Mar2004, Vol. 264 Issue 1-3, p48. 5p. - Publication Year :
- 2004
-
Abstract
- High-performance 370 nm ultraviolet light-emitting diodes (UV-LED) with an AlGaN/InGaN single quantum well structure were fabricated on sapphire substrate by using the metal organic chemical vapor deposition (MOCVD) technique. Three group different growth conditions of undoped n-side barrier and p-side barrier were chosen to sandwich the InGaN well layer in the LED samples. By using high-Al content and symmetric composition n- and p-side barriers, the output efficiency of our UV-LED has been greatly improved. An output power of 2.5 mW at an injection current of 20 mA was achieved. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 264
- Issue :
- 1-3
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 12379297
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2003.12.030