Low-temperature fabrication of Pb(Zr0.52Ti0.48)O3 films using a new chemical solution deposition method without post-annealing

Pb(Zr0.52Ti0.48)O3 (PZT) films have been fabricated on Pt/Ti/SiO2/Si substrates with a new chemical solution deposition technique, in which each layer of PbZrO3 (PZ) and PbTiO3 (PT) was heated to 600°C as soon as it was spin coated. The fabrication of the homogeneous PZT film was finished through the reaction between the PT and PZ layers and without post-annealing. By surveying the variations of the surface micrographs during the deposition process, an island–column hybrid growth mode could be concluded. The low-temperature fabrication brings about enhanced fatigue resistance because of the suppression of the formation of the oxygen vacancies. Measurements of the ferroelectric properties suggest a promising application for the ferroelectric memory devices. [Copyright &y& Elsevier]