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STRAINING FOR SPEED.
- Source :
-
Science News . 2/28/2004, Vol. 165 Issue 9, p136-138. 3p. 2 Color Photographs, 1 Diagram. - Publication Year :
- 2004
-
Abstract
- Discusses the experiments being done by chipmakers on the architecture of the silicon crystals from which transistors are made. Background on two types of transistors developed by the firm Intel; Functions of silicon-based transistors; Approaches used in creating strains in crystalline silicon.
- Subjects :
- *SILICON crystals
*TRANSISTOR circuits
*COMPUTER industry
*INTEGRATED circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00368423
- Volume :
- 165
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Science News
- Publication Type :
- Periodical
- Accession number :
- 12383802
- Full Text :
- https://doi.org/10.2307/4014834