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STRAINING FOR SPEED.

Authors :
Weiss, Peter
Source :
Science News. 2/28/2004, Vol. 165 Issue 9, p136-138. 3p. 2 Color Photographs, 1 Diagram.
Publication Year :
2004

Abstract

Discusses the experiments being done by chipmakers on the architecture of the silicon crystals from which transistors are made. Background on two types of transistors developed by the firm Intel; Functions of silicon-based transistors; Approaches used in creating strains in crystalline silicon.

Details

Language :
English
ISSN :
00368423
Volume :
165
Issue :
9
Database :
Academic Search Index
Journal :
Science News
Publication Type :
Periodical
Accession number :
12383802
Full Text :
https://doi.org/10.2307/4014834