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Study of Degradation Processes Kinetics in Ohmic Contacts of Resonant Tunneling Diodes Based on Nanoscale AlAs/GaAs Heterostructures under Influence of Temperature.
- Source :
-
AIP Conference Proceedings . 2017, Vol. 1858 Issue 1, p1-5. 5p. 1 Diagram, 1 Graph. - Publication Year :
- 2017
-
Abstract
- The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1858
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 124079340
- Full Text :
- https://doi.org/10.1063/1.4989938