Cite
Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application.
MLA
Yan, Xiaobing, et al. “Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application.” IEEE Transactions on Electron Devices, vol. 64, no. 2, Feb. 2017, pp. 587–92. EBSCOhost, https://doi.org/10.1109/TED.2016.2637365.
APA
Yan, X., Li, Y., Zhao, J., & Zhou, Z. (2017). Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application. IEEE Transactions on Electron Devices, 64(2), 587–592. https://doi.org/10.1109/TED.2016.2637365
Chicago
Yan, Xiaobing, Yucheng Li, Jianhui Zhao, and Zhenyu Zhou. 2017. “Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application.” IEEE Transactions on Electron Devices 64 (2): 587–92. doi:10.1109/TED.2016.2637365.