Cite
Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure.
MLA
Ho, Shin-Yi, et al. “Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure.” IEEE Transactions on Electron Devices, vol. 64, no. 4, Apr. 2017, pp. 1505–10. EBSCOhost, https://doi.org/10.1109/TED.2017.2657683.
APA
Ho, S.-Y., Lee, C.-H., Tzou, A.-J., Kuo, H.-C., Wu, Y.-R., & Huang, J. (2017). Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure. IEEE Transactions on Electron Devices, 64(4), 1505–1510. https://doi.org/10.1109/TED.2017.2657683
Chicago
Ho, Shin-Yi, Chun-Hsun Lee, An-Jye Tzou, Hao-Chung Kuo, Yuh-Renn Wu, and Jianjang Huang. 2017. “Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure.” IEEE Transactions on Electron Devices 64 (4): 1505–10. doi:10.1109/TED.2017.2657683.