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Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures.
- Source :
-
IEEE Transactions on Electron Devices . Apr2017, Vol. 64 Issue 4, p1799-1805. 7p. - Publication Year :
- 2017
-
Abstract
- In order to verify the effects of localized body doping (LBD) on alternating current switching performances of tunnel FETs (TFETs) with vertical structures, The TFET inverter composed of n-/p-type TFET with the localized p+/n+ body doping is simulated with the help of mixed-mode device and circuit simulations. As a result, falling/rising delay is significantly improved due to the locally high channel-to-drain side energy barrier induced by the LBD. Furthermore, LBD conditions, such as doping concentration, depth, and width, are optimized to maximize the improvement of falling/rising delay. Based on the optimization results, it is found that enough wide doping width and deep depth are inevitable to minimize the drain voltage ( V D )-induced lowering of the locally increased barrier and the increase of ambipolar current and too wide doping width cannot be applied due to the ON-current reduction caused by the degraded controllability of gate voltage on channel similarly to short channel effects. Moreover, the doping width and depth should be adjusted according to LBD concentration. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 124146704
- Full Text :
- https://doi.org/10.1109/TED.2017.2669365