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Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation.

Authors :
Piccinini, Enrico
Brunetti, Rossella
Rudan, Massimo
Source :
IEEE Transactions on Electron Devices. May2017, Vol. 64 Issue 5, p2185-2192. 8p.
Publication Year :
2017

Abstract

The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a drawback for memory applications, can fruitfully be exploited to implement primitives for hardware security. By applying a set voltage pulse, whose amplitude corresponds to a switching probability of 50%, to a memory array initially placed in the full-reset state, half of the memory bits are statistically switched and programmed to state “1,” whereas the remainder of the bits persist in state “0.” Such a natural randomness can be exploited to create a true random number generator (TRNG), which is the building block of cryptographic applications. The feasibility of a TRNG by means of self-heating PCM cells is assessed and demonstrated through simulations based upon the random network model, i.e., a microscopic transport model previously developed and tested by the authors. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189383
Volume :
64
Issue :
5
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
124146735
Full Text :
https://doi.org/10.1109/TED.2017.2673867