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Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation.
- Source :
-
IEEE Transactions on Electron Devices . May2017, Vol. 64 Issue 5, p2185-2192. 8p. - Publication Year :
- 2017
-
Abstract
- The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a drawback for memory applications, can fruitfully be exploited to implement primitives for hardware security. By applying a set voltage pulse, whose amplitude corresponds to a switching probability of 50%, to a memory array initially placed in the full-reset state, half of the memory bits are statistically switched and programmed to state “1,” whereas the remainder of the bits persist in state “0.” Such a natural randomness can be exploited to create a true random number generator (TRNG), which is the building block of cryptographic applications. The feasibility of a TRNG by means of self-heating PCM cells is assessed and demonstrated through simulations based upon the random network model, i.e., a microscopic transport model previously developed and tested by the authors. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 124146735
- Full Text :
- https://doi.org/10.1109/TED.2017.2673867