Cite
Superior NBTI in High-k SiGe Transistors–Part II: Theory.
MLA
Waltl, M., et al. “Superior NBTI in High-k SiGe Transistors–Part II: Theory.” IEEE Transactions on Electron Devices, vol. 64, no. 5, May 2017, pp. 2099–105. EBSCOhost, https://doi.org/10.1109/TED.2017.2686454.
APA
Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., & Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors–Part II: Theory. IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/TED.2017.2686454
Chicago
Waltl, M., G. Rzepa, A. Grill, W. Goes, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, and T. Grasser. 2017. “Superior NBTI in High-k SiGe Transistors–Part II: Theory.” IEEE Transactions on Electron Devices 64 (5): 2099–2105. doi:10.1109/TED.2017.2686454.