Cite
Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs.
MLA
Duan, Meng, et al. “Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale NMOSFETs.” IEEE Transactions on Electron Devices, vol. 64, no. 6, June 2017, pp. 2478–84. EBSCOhost, https://doi.org/10.1109/TED.2017.2691008.
APA
Duan, M., Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B., & Asenov, A. (2017). Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs. IEEE Transactions on Electron Devices, 64(6), 2478–2484. https://doi.org/10.1109/TED.2017.2691008
Chicago
Duan, Meng, Jian Fu Zhang, Zhigang Ji, Wei Dong Zhang, Ben Kaczer, and Asen Asenov. 2017. “Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale NMOSFETs.” IEEE Transactions on Electron Devices 64 (6): 2478–84. doi:10.1109/TED.2017.2691008.