Cite
Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node.
MLA
Jang, Doyoung, et al. “Device Exploration of NanoSheet Transistors for Sub-7-Nm Technology Node.” IEEE Transactions on Electron Devices, vol. 64, no. 6, June 2017, pp. 2707–13. EBSCOhost, https://doi.org/10.1109/TED.2017.2695455.
APA
Jang, D., Yakimets, D., Eneman, G., Schuddinck, P., Bardon, M. G., Raghavan, P., Spessot, A., Verkest, D., & Mocuta, A. (2017). Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node. IEEE Transactions on Electron Devices, 64(6), 2707–2713. https://doi.org/10.1109/TED.2017.2695455
Chicago
Jang, Doyoung, Dmitry Yakimets, Geert Eneman, Pieter Schuddinck, Marie Garcia Bardon, Praveen Raghavan, Alessio Spessot, Diederik Verkest, and Anda Mocuta. 2017. “Device Exploration of NanoSheet Transistors for Sub-7-Nm Technology Node.” IEEE Transactions on Electron Devices 64 (6): 2707–13. doi:10.1109/TED.2017.2695455.