Cite
3-D Edge Termination Design and R \mathrm{\scriptscriptstyle ON,\text {sp}} -BV Model of A 700-V Triple RESURF LDMOS With N-Type Top Layer.
MLA
Qiao, Ming, et al. “3-D Edge Termination Design and R \mathrm{\scriptscriptstyle ON,\text {sp}} -BV Model of A 700-V Triple RESURF LDMOS With N-Type Top Layer.” IEEE Transactions on Electron Devices, vol. 64, no. 6, June 2017, pp. 2579–86. EBSCOhost, https://doi.org/10.1109/TED.2017.2694451.
APA
Qiao, M., Wang, Z., Wang, Y., Yu, L., Xiao, Q., Li, Z., & Zhang, B. (2017). 3-D Edge Termination Design and R \mathrm{\scriptscriptstyle ON,\text {sp}} -BV Model of A 700-V Triple RESURF LDMOS With N-Type Top Layer. IEEE Transactions on Electron Devices, 64(6), 2579–2586. https://doi.org/10.1109/TED.2017.2694451
Chicago
Qiao, Ming, Zhengkang Wang, Yuru Wang, Liangliang Yu, Qianqian Xiao, Zhaoji Li, and Bo Zhang. 2017. “3-D Edge Termination Design and R \mathrm{\scriptscriptstyle ON,\text {sp}} -BV Model of A 700-V Triple RESURF LDMOS With N-Type Top Layer.” IEEE Transactions on Electron Devices 64 (6): 2579–86. doi:10.1109/TED.2017.2694451.