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Analysis of GaN HEMTs Switching Transients Using Compact Model.
- Source :
-
IEEE Transactions on Electron Devices . Jul2017, Vol. 64 Issue 7, p2900-2905. 6p. - Publication Year :
- 2017
-
Abstract
- This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computer-aided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 124146870
- Full Text :
- https://doi.org/10.1109/TED.2017.2703103