Multiple Trench Split-gate SOI LDMOS Integrated With Schottky Rectifier.

In this paper, a multiple trench split-gate silicon-on-insulator (SOI) lateral double-diffused MOSFET with a Schottky rectifier (MTS-SG-LDMOS) is proposed and its characteristics are studied using 2-D simulations. The new structure features double oxide trenches, a floating polysilicon split-gate, and a Schottky rectifier. Each oxide trench includes a vertical field plate which enhances the depletion of the drift region and modulates the bulk electric field. As the simulation results, when compared to the conventional SOI LDMOS (C-LDMOS), the breakdown voltage in the MTS-SG-LDMOS increases from 297 to 350 V, the specific on-state resistance ( R \mathrm{\scriptscriptstyle ON,\mathsf {sp}} ) decreases from 142.9 to 48.2 \textm\Omega \cdot \mathsf cm^\mathsf 2 , and the gate–drain charge ( Q {\mathsf {gd}} ) decreases from 19 to 9 pC. Moreover, the reverse recovery time of the proposed structure shows a 73.6% reduction as compared to the C-LDMOS device. [ABSTRACT FROM AUTHOR]