Cite
Effects of interface energy modification in solution-processed In2O3 thin film transistors for sensing applications.
MLA
Kim, Chaewon, et al. “Effects of Interface Energy Modification in Solution-Processed In2O3 Thin Film Transistors for Sensing Applications.” Sensors & Actuators A: Physical, vol. 263, Aug. 2017, pp. 772–77. EBSCOhost, https://doi.org/10.1016/j.sna.2017.05.026.
APA
Kim, C., Park, J.-W., Lee, Y.-R., & Lee, M. J. (2017). Effects of interface energy modification in solution-processed In2O3 thin film transistors for sensing applications. Sensors & Actuators A: Physical, 263, 772–777. https://doi.org/10.1016/j.sna.2017.05.026
Chicago
Kim, Chaewon, Jin-Woo Park, Yeo-Ryang Lee, and Mi Jung Lee. 2017. “Effects of Interface Energy Modification in Solution-Processed In2O3 Thin Film Transistors for Sensing Applications.” Sensors & Actuators A: Physical 263 (August): 772–77. doi:10.1016/j.sna.2017.05.026.