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Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates.
- Source :
-
Physica Status Solidi (C) . Aug2017, Vol. 14 Issue 8, pn/a-N.PAG. 3p. - Publication Year :
- 2017
-
Abstract
- Semipolar III-nitrides have attracted increasing attention because of the reduced piezoelectric field in the active layer. In particular, (11-22) plane is promising due to the small polarization field along the growth axis and the epitaxial matching on m-plane sapphire. The aim of this study was to assess the effect of growth conditions on the structural and electrical properties of Si-doped (11-22) AlGaN. Semipolar AlGaN/AlN layers were grown on m-plane sapphire by metal-organic chemical vapor deposition at different temperatures, V/III ratios, and tetraethylesilane flows. Surface morphology, crystalline quality, and electrical properties of the AlGaN layers were investigated with AFM, XRD, and by Hall measurements, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 14
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 124623800
- Full Text :
- https://doi.org/10.1002/pssc.201600248