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Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method.

Authors :
Yamamoto, Takuya
Adkar, Nikhil
Okano, Yasunori
Ujihara, Toru
Dost, Sadik
Source :
Journal of Crystal Growth. Sep2017, Vol. 474, p50-54. 5p.
Publication Year :
2017

Abstract

A numerical simulation study was carried out to examine the transport phenomena occurring during the Top-Seeded Solution Growth (TSSG) process of SiC. The simulation model includes the contributions of radiative and conductive heat transfer in the furnace, mass transfer and fluid flow in the melt, and the induced electric and magnetic fields. Results show that the induced Lorentz force is dominant in the melt compared with that of buoyancy. At the relatively low coil frequencies, the effect of the Lorentz force on the melt flow is significant, and the corresponding flow patterns loose their axisymmetry and become almost fully disturbed. However, at the relatively higher frequency values, the flow is steady and the flow patterns remain axisymmetric. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00220248
Volume :
474
Database :
Academic Search Index
Journal :
Journal of Crystal Growth
Publication Type :
Academic Journal
Accession number :
124820279
Full Text :
https://doi.org/10.1016/j.jcrysgro.2016.12.086