Interconversion of One-Dimensional Thiogallates Cs2[Ga2(S2)2-x S2+x ] (x = 0, 1, 2) by Using High-Temperature Decomposition and Polysulfide-Flux Reactions.

The potential of cesium polysulfide-flux reactions for the synthesis of chalcogenogallates was investigated by using X-ray diffraction and Raman spectroscopy. An investigation of possible factors influencing the product formation revealed that only the polysulfide content x in the Cs2S x melts has an influence on the crystalline reaction product. From sulfur-rich melts (x > 7), CsGaS3 is formed, whereas sulfur-poor melts (x < 7) lead to the formation of Cs2Ga2S5. In situ investigations using high-temperature Raman spectroscopy revealed that the crystallization of these solids takes place upon cooling of the melts. Upon heating, CsGaS3 and Cs2Ga2S5 release gaseous sulfur due to the degradation of S2 2- units. This decomposition of CsGaS3 to Cs2Ga2S5 and finally to CsGaS2-mC16 was further studied in situ by using high-temperature X-ray powder diffraction. A combination of the polysulfide reaction route and the high-temperature decomposition leads to the possibility of the directed interconversion of these thiogallates. The presence of disulfide units in the anionic substructures of these thiogallates has a significant influence on the electronic band structures and their optical properties. This influence was studied by using UV/vis-diffuse reflectance spectroscopy and DFT simulations, revealing a trend of smaller band gaps with increasing S2 2- content. [ABSTRACT FROM AUTHOR]