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Band gap tuning in Si-SiO2 nanocomposite: Interplay of confinement effect and surface/interface bonding.
- Source :
-
Applied Surface Science . Dec2017, Vol. 425, p1089-1094. 6p. - Publication Year :
- 2017
-
Abstract
- Correlation between size, bonding of Si and O at the surface/interface of Si nanocrystals and frequency of Si phonons in Si-SiO 2 nanocomposites is established using Raman mapping and X-ray photoelectron spectroscopy. Corroboration of these results with absorption spectroscopy shows that lowering of direct transition of light electron conduction band to heavy hole valence band ∼2.8 and 2.95 eV is a result of the interplay between effect of electron confinement (increases band gap) and oxidation bonding environment at the surface/interface (decreases band gap) of a nanocrystal in Si-SiO 2 nanocomposites. These studies have generated deeper insight into the fundamental understanding of the nanocomposite, which can allow easy optical microscopy monitoring of Si-SiO 2 based device fabrication. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON analysis
*SILICON testing
*SILICA
*SILICA testing
*NANOCOMPOSITE materials
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 425
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 125175107
- Full Text :
- https://doi.org/10.1016/j.apsusc.2017.07.133