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Characterization of a self-aligned RTD using a SiNx sidewall process for high-speed applications.
- Source :
-
Microwave & Optical Technology Letters . Dec2017, Vol. 59 Issue 12, p3073-3076. 4p. 1 Black and White Photograph, 3 Diagrams, 1 Chart, 2 Graphs. - Publication Year :
- 2017
-
Abstract
- In this article, an InP-based self-aligned resonant-tunneling-diode (RTD) using a SiNX sidewall process has been fabricated and characterized for high-speed microwave applications. A plasma-enhanced dry-etch technique has been used to form a vertical emitter mesa. The measured peak currents are almost constant at a peak voltage due to negligible thermionic emission in a wide temperature range up to 125°C. The extracted series resistance of the fabricated self-aligned RTD is 14.5 Ω, which is reduced by 27% compared with that of the nonself-aligned RTD by reducing the spacing between emitter mesa and collector metal. To the best of authors' knowledge, this is the first attempt to characterize a self-aligned RTD using the dry-etched mesa and the SiNX sidewall structure. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 59
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 125298457
- Full Text :
- https://doi.org/10.1002/mop.30875