In situ gas-solid reaction for fabrication of copper antimony sulfide thin film as photovoltaic absorber.

In this report, a facile, low-cost, in situ gas-solid reaction method has been successfully employed for the deposition of copper antimony sulfide (CuSbS 2 ) semiconductor film, where copper and antimony metal precursor is first spin-coated on the TiO 2 substrate, followed by reaction with H 2 S gas and further thermal annealing. The CuSbS 2 film shows broad absorption ranged from 400 nm to 830 nm with a band gap of 1.57 eV. X-ray photoelectron spectroscopy (XPS) analysis confirms valence states of the synthetic samples for Cu + , Sb 3+ and S 2− , verifying phase-pure CuSbS 2 . Besides, the CuSbS 2 films made by one-step method show good photoelectric property with a high potential as photovoltaic absorber. [ABSTRACT FROM AUTHOR]