The high-thermal stability and ultrafast phase change memory based on Ge1.6Te-GaSb nano-composite alloys.

Solving the contradictory between data retention and switching speed has been the subject of numerous investigations on phase change materials. Towards this end, Ge 1.6 Te-GaSb nano-composite is proposed, which combines advantages of fast crystallization speed and high thermal stability. The characterization results elucidate that doped materials exhibit a high crystallization temperature due to the enhanced stability of the amorphous state associated with the generated larger energy barrier. Furthermore, the reversible electrical switching capability of the phase-change devices is improved in terms of an ultrafast speed of 5 ns with Sb-rich GaSb addition. A good endurance of 20 K and long data retention are achieved simultaneously, indicating that Sb-rich GaSb incorporation into Ge 1.6 Te alloy is a promising material for high-temperature performance applications. [ABSTRACT FROM AUTHOR]