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Fabrication and characterization of silicon-nanocrystal using platinum-nanomask
- Source :
-
Thin Solid Films . Mar2004, Vol. 451/452, p379. 5p. - Publication Year :
- 2004
-
Abstract
- We have fabricated Si nanocrystals utilizing nanometer-sized Pt islands acting as etching-masks on SiOx/amorphous-Si/SiOx/p-Si (1 0 0) thin films. In the measurement of transmission electron microscopy the Si nanocrystals embedded in SiO2 were observed, and in the measurement of cathodoluminescence spectroscopy at 77 K Si nanocrystal-related peaks were observed at 462 and 647 nm. For the Al/SiO2/nanocrystalline-Si/SiO2/p-Si capacitor structure, a hysteretic behavior with the flatband voltage shift of 0.592 V was observed in the measurement of capacitance–voltage characteristic at 300 K. These results indicate that Si nanocrystals can be formed by using a nanosized Pt island etching-mask, and that Si nanocrystals embedded in SiO2 layer act as Si quantum dots which hold promise potential applications. [Copyright &y& Elsevier]
- Subjects :
- *NANOCRYSTALS
*SILICON
*PLATINUM
*CATHODOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 451/452
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 12558814
- Full Text :
- https://doi.org/10.1016/j.tsf.2003.10.132