Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution.

MLA

Rozhavskaya, Mariia M., et al. “Metal Organic Vapor Phase Epitaxy Growth of (Al)GaN Heterostructures on SiC/Si(111) Templates Synthesized by Topochemical Method of Atoms Substitution.” Physica Status Solidi. A: Applications & Materials Science, vol. 214, no. 10, Oct. 2017, p. n/a-N.PAG. EBSCOhost, https://doi.org/10.1002/pssa.201700190.

APA

Rozhavskaya, M. M., Kukushkin, S. A., Osipov, A. V., Myasoedov, A. V., Troshkov, S. I., Sorokin, L. M., Brunkov, P. N., Baklanov, A. V., Telyatnik, R. S., Juluri, R. R., Pedersen, K., & Popok, V. N. (2017). Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution. Physica Status Solidi. A: Applications & Materials Science, 214(10), n/a-N.PAG. https://doi.org/10.1002/pssa.201700190

Chicago

Rozhavskaya, Mariia M., Sergey A. Kukushkin, Andrey V. Osipov, Alexandr V. Myasoedov, Sergey I. Troshkov, Lev M. Sorokin, Pavel N. Brunkov, et al. 2017. “Metal Organic Vapor Phase Epitaxy Growth of (Al)GaN Heterostructures on SiC/Si(111) Templates Synthesized by Topochemical Method of Atoms Substitution.” Physica Status Solidi. A: Applications & Materials Science 214 (10): n/a-N.PAG. doi:10.1002/pssa.201700190.