Synthesis of Ga(S 2 CN(CH 3 ) 2 ) 3 nanoparticles using ultrasonic spray method as GaN precursor.

Ga(S2CN(CH3)2)3(Ga(mDTC)3) nanoparticles (NPs) were prepared using ultrasonic spray method, and well mono-dispersed, with a mean particles size of 82 nm. Ga(mDTC)3NPs changed into Ga2S3at 300°C under N2environment, and the spin-coated films transformed into GaN films above 700°C under NH3environment. From these results, Ga(mDTC)3films were transformed into γ-Ga2S3films by thermal decomposition, and S elements were substituted simultaneously by N elements. In this stage, the pyrolytic GaN film underwent a recrystallization process, and a preferred direction of GaN films was mainly aligned to z-axis direction due to the lower energy surface of hexagonal structure. [ABSTRACT FROM AUTHOR]