Evidence of strong magneto-dielectric coupling and enhanced electrical insulation at room temperature in Nd and Mn co-doped bismuth ferrite.

The search for a room temperature single phase multiferroic material displaying strong magnetoelectric coupling and low leakage current for practical device applications has been underway and a long-standing challenge. In continuation to our investigations for achieving robust ME coupling and enhanced electrical insulation at room temperature, we report magnetic, electrical insulation, and magneto-dielectric properties of Nd and Mn co-doped BiFeO3 (Bi0.95Nd0.05)(Fe0.97Mn0.03)O3 (BNFM) polycrystalline electro-ceramics. Magnetic studies have been carried out in two different temperature regions, i.e., 15–300K and 300–800K. The doping of Nd and Mn in the BiFeO3 (BFO) lattice slightly reduces the Néel temperature (TN) with broad weak ferromagnetic (FM) to paramagnetic (PM) phase transition by increasing ferromagnetic domain fractions. A small amount of magnetic frustration is also found in the low temperature regions, below 300K at fields of 100 and 200Oe, and below 200K at higher field cooled and zero field cooled; this may be due weak long range ordering and small magnitude of magnetic moments. High temperature magnetic results imply the existence of a weak ferromagnetic phase with a FM to PM phase transition around 630K (±5K) and significant suppression of the spin frustration and canting properties of BFO. The Nd and Mn co-doping also substantially improved the electrical insulating properties of BFO. The leakage current analysis suggests that the Simmons’ mechanism is probably a dominant conduction mechanism in BNFM at room temperature. The observation of dielectric anomaly around the TN and significant variation of dielectric parameters with different static magnetic field in BNFM implies the existence of strong magnetodielectric coupling. The enhanced magnetic and electrical insulation properties with strong magnetodielectric coupling at room temperature elucidate the possible potential candidates for multifunctional and spintronics device applications. [ABSTRACT FROM AUTHOR]