Influence of the gate and dielectric thickness on the electro-optical performance of SRO-based LECs: Resistive switching, IR and deep UV emission.

MLA

Cabañas-Tay, S. A., et al. “Influence of the Gate and Dielectric Thickness on the Electro-Optical Performance of SRO-Based LECs: Resistive Switching, IR and Deep UV Emission.” Journal of Luminescence, vol. 192, Dec. 2017, pp. 919–24. EBSCOhost, https://doi.org/10.1016/j.jlumin.2017.08.034.

APA

Cabañas-Tay, S. A., Palacios-Huerta, L., Aceves-Mijares, M., Alvarez-Quintana, J., Pérez-García, S. A., Domínguez-Horna, C., & Morales-Sánchez, A. (2017). Influence of the gate and dielectric thickness on the electro-optical performance of SRO-based LECs: Resistive switching, IR and deep UV emission. Journal of Luminescence, 192, 919–924. https://doi.org/10.1016/j.jlumin.2017.08.034

Chicago

Cabañas-Tay, S.A., L. Palacios-Huerta, M. Aceves-Mijares, J. Alvarez-Quintana, S.A. Pérez-García, C. Domínguez-Horna, and A. Morales-Sánchez. 2017. “Influence of the Gate and Dielectric Thickness on the Electro-Optical Performance of SRO-Based LECs: Resistive Switching, IR and Deep UV Emission.” Journal of Luminescence 192 (December): 919–24. doi:10.1016/j.jlumin.2017.08.034.