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Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate.
- Source :
-
Thin Solid Films . Nov2017, Vol. 641, p2-7. 6p. - Publication Year :
- 2017
-
Abstract
- Epitaxial lateral overgrowth (ELO) process of gallium nitride (GaN) films on cone-shaped patterned sapphire substrate (PSS), which was pretreated by ion-implantation was performed by using a metal organic chemical vapor deposition. A 250-nm-thick silicon dioxide (SiO 2 ) mask was covered on the planar surface of the PSS to protect them from ion-implantation damages, whereas the cone-shaped patterns of the PSS were exposed to collide with the N + ions. The ion-implantation pretreatment was selectively carried out on the cone-shaped pattern of PSS at 67.5 keV with a high dose of 5 × 10 17 cm − 2 . As a result of ion-implantation pretreatment, nucleation growth of GaN poly-grains was inhibited on the cone-shaped patterns with various crystal planes, such as c-like plane, R-like plane, and n-like plane. Surface roughness and crystal quality of GaN films grown on ion-implanted PSS were improved owing to the inhibition of nucleation growth on the patterns. The ion-implantation pretreatment is a very promising technique in the ELO process of GaN on an uneven substrate such as a cone-shaped PSS that includes various crystal planes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 641
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 125722479
- Full Text :
- https://doi.org/10.1016/j.tsf.2017.06.042