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Rise-Time Improvement in Bipolar Pulse Solid-State Marx Modulators.
- Source :
-
IEEE Transactions on Plasma Science . Oct2017 Part 1, Vol. 45 Issue 10, Part 1, p2656-2660. 5p. - Publication Year :
- 2017
-
Abstract
- This paper presents the effect of stray capacitances in bipolar (negative and/or positive) pulses generated by the two different topologies of the solid-state Marx modulators. According to the analysis, the stray capacitances influence the energy transfer from the Marx modulator capacitors to the load affecting the bipolar (negative and/or positive) pulse rise time. This paper deals with the structure design to reduce the influence of the stray capacitance and to improve the pulse rise time of these bipolar solid-state Marx modulators. A four-stage laboratory prototype of the two topologies has been assembled using 1200-V insulated gate bipolar transistors and diodes, operating with 1000-V dc input voltage and 1-kHz frequency, producing 4-kV bipolar pulses, with 5- \mu \texts pulse duration and 120-ns rise time, into a resistive load. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00933813
- Volume :
- 45
- Issue :
- 10, Part 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Plasma Science
- Publication Type :
- Academic Journal
- Accession number :
- 125754962
- Full Text :
- https://doi.org/10.1109/TPS.2017.2720971