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Analytical Modeling of DG-MOSFET in Subthreshold Regime by Green’s Function Approach.
- Source :
-
IEEE Transactions on Electron Devices . Aug2017, Vol. 64 Issue 8, p3056-3062. 7p. - Publication Year :
- 2017
-
Abstract
- In this paper, we have developed an analytical model of double gate MOSFET using Green’s function approach in the subthreshold regime of operation. The exact analytical solution to 2-D Poisson’s equation by Green’s function approach is redefined and Fourier coefficients are calculated correctly that has a direct impact on the outcomes of the model. The approach considers 2-D mixed boundary conditions and multizone techniques while deriving potential equations. It is observed that the Green’s function approach of solving 2-D Poisson’s equation in both oxide and silicon region can accurately predict channel potential, subthreshold current ( I {\mathsf {sub}} ), and subthreshold slope of both long and short channel devices designed with higher as well as lower t {\mathsf {si}}/t {\mathsf {ox}} oxide thickness ratio. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 125755650
- Full Text :
- https://doi.org/10.1109/TED.2017.2708603