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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . Aug2017, Vol. 64 Issue 8, p3139-3144. 6p. - Publication Year :
- 2017
-
Abstract
- AlGaN/GaN HEMTs with two kinds of p-type metal-oxide (CuO and NiOx) gates have been fabricated, in which the threshold voltage can be modulated effectively. Especially, the threshold voltage of the device shows a 0.7 V positive shift with a high-quality CuO gate layer. Meanwhile, a high on/off current ratio of $\sim 10^{{\mathsf {9}}}$ , a large saturated drain current of ~1030 mA/mm, and an improved transconductance of 200 mS/mm are also achieved. The pulsed transfer characteristics and output characteristics exhibit small hysteresis and ignorable current collapse, signifying an excellent CuO/AlGaN interface. Therefore, CuO can be used as a potential p-type gate for high-performance GaN-based MIS-HEMTs. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 125755680
- Full Text :
- https://doi.org/10.1109/TED.2017.2712782