Cite
DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOI.
MLA
Yu, Bo, et al. “DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOI.” IEEE Transactions on Electron Devices, vol. 64, no. 9, Sept. 2017, pp. 3548–54. EBSCOhost, https://doi.org/10.1109/TED.2017.2725485.
APA
Yu, B., Ma, K., Meng, F., Yeo, K. S., Shyam, P., Zhang, S., & Verma, P. R. (2017). DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOI. IEEE Transactions on Electron Devices, 64(9), 3548–3554. https://doi.org/10.1109/TED.2017.2725485
Chicago
Yu, Bo, Kaixue Ma, Fanyi Meng, Kiat Seng Yeo, Parthasarathy Shyam, Shaoqiang Zhang, and Purakh Raj Verma. 2017. “DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOI.” IEEE Transactions on Electron Devices 64 (9): 3548–54. doi:10.1109/TED.2017.2725485.