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Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes.
- Source :
-
IEEE Transactions on Electron Devices . Oct2017, Vol. 64 Issue 10, p4050-4056. 7p. - Publication Year :
- 2017
-
Abstract
- In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal–semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 125755828
- Full Text :
- https://doi.org/10.1109/TED.2017.2742991