Cite
Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications.
MLA
An, Junjie, et al. “Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications.” IEEE Transactions on Electron Devices, vol. 64, no. 10, Oct. 2017, pp. 4219–25. EBSCOhost, https://doi.org/10.1109/TED.2017.2742542.
APA
An, J., Namai, M., Yano, H., & Iwamuro, N. (2017). Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications. IEEE Transactions on Electron Devices, 64(10), 4219–4225. https://doi.org/10.1109/TED.2017.2742542
Chicago
An, Junjie, Masaki Namai, Hiroshi Yano, and Noriyuki Iwamuro. 2017. “Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications.” IEEE Transactions on Electron Devices 64 (10): 4219–25. doi:10.1109/TED.2017.2742542.