Cite
Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS Technology.
MLA
Galy, Philippe, et al. “Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-Nm FD-SOI Advanced CMOS Technology.” IEEE Transactions on Electron Devices, vol. 64, no. 10, Oct. 2017, pp. 3991–97. EBSCOhost, https://doi.org/10.1109/TED.2017.2741524.
APA
Galy, P., Bourgeat, J., Guitard, N., Lise, J.-D., Marin-Cudraz, D., & Legrand, C.-A. (2017). Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS Technology. IEEE Transactions on Electron Devices, 64(10), 3991–3997. https://doi.org/10.1109/TED.2017.2741524
Chicago
Galy, Philippe, Johan Bourgeat, Nicolas Guitard, Jean-Daniel Lise, David Marin-Cudraz, and Charles-Alexandre Legrand. 2017. “Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-Nm FD-SOI Advanced CMOS Technology.” IEEE Transactions on Electron Devices 64 (10): 3991–97. doi:10.1109/TED.2017.2741524.