Back to Search Start Over

Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots

Authors :
Ohkouchi, S.
Nakamura, Y.
Nakamura, H.
Asakawa, K.
Source :
Physica E. Mar2004, Vol. 21 Issue 2-4, p597. 4p.
Publication Year :
2004

Abstract

We have successfully and reproducibly fabricated uniform indium (In) nano-dots at a selected point. Nano-dot formation was realized using an atomic force microscope (AFM) probe with a specially designed cantilever, which was equipped with a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. The In nano-dots formed in this study can be directly converted to InAs quantum dots by subsequent irradiation of arsenic flux in the molecular beam epitaxy chamber, which is connected to the AFM chamber through an ultra-high-vacuum tunnel. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
13869477
Volume :
21
Issue :
2-4
Database :
Academic Search Index
Journal :
Physica E
Publication Type :
Academic Journal
Accession number :
12576506
Full Text :
https://doi.org/10.1016/j.physe.2003.11.086