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Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots
- Source :
-
Physica E . Mar2004, Vol. 21 Issue 2-4, p597. 4p. - Publication Year :
- 2004
-
Abstract
- We have successfully and reproducibly fabricated uniform indium (In) nano-dots at a selected point. Nano-dot formation was realized using an atomic force microscope (AFM) probe with a specially designed cantilever, which was equipped with a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. The In nano-dots formed in this study can be directly converted to InAs quantum dots by subsequent irradiation of arsenic flux in the molecular beam epitaxy chamber, which is connected to the AFM chamber through an ultra-high-vacuum tunnel. [Copyright &y& Elsevier]
- Subjects :
- *QUANTUM dots
*SEMICONDUCTORS
*NANOTECHNOLOGY
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 13869477
- Volume :
- 21
- Issue :
- 2-4
- Database :
- Academic Search Index
- Journal :
- Physica E
- Publication Type :
- Academic Journal
- Accession number :
- 12576506
- Full Text :
- https://doi.org/10.1016/j.physe.2003.11.086