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Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques.
- Source :
-
Solar Energy Materials & Solar Cells . Jan2018, Vol. 174, p77-83. 7p. - Publication Year :
- 2018
-
Abstract
- In a previous paper [1], we reported on Cu(In,Ga)Se 2 -based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (≤ 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1 eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09270248
- Volume :
- 174
- Database :
- Academic Search Index
- Journal :
- Solar Energy Materials & Solar Cells
- Publication Type :
- Academic Journal
- Accession number :
- 125835739
- Full Text :
- https://doi.org/10.1016/j.solmat.2017.08.027