MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics.

MLA

Haodong Zhang, et al. “MoS2 Functionalization with a Sub-Nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics.” Chemistry of Materials, vol. 29, no. 16, Aug. 2017, pp. 6772–80. EBSCOhost, https://doi.org/10.1021/acs.chemmater.7b01695.

APA

Haodong Zhang, Arutchelvan, G., Meersschaut, J., Gaur, A., Conard, T., Bender, H., Lin, D., Asselberghs, I., Heyns, M., Radu, I., Vandervorst, W., & Delabie, A. (2017). MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics. Chemistry of Materials, 29(16), 6772–6780. https://doi.org/10.1021/acs.chemmater.7b01695

Chicago

Haodong Zhang, Goutham Arutchelvan, Johan Meersschaut, Abhinav Gaur, Thierry Conard, Hugo Bender, Dennis Lin, et al. 2017. “MoS2 Functionalization with a Sub-Nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics.” Chemistry of Materials 29 (16): 6772–80. doi:10.1021/acs.chemmater.7b01695.