Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD.

Epitaxial SnO 2 films were deposited on MgF 2 (110) substrates at different substrate temperatures by the metal organic chemical vapor deposition (MOCVD) method. The structural, optical and electrical properties as well as elementary composition were studied in detail. The obtained films were all rutile phase SnO 2 grown along the [110] direction. The SnO 2 film prepared at 660 °C was single crystalline epitaxial film. The epitaxial relationships were clearly determined as SnO 2 (110) || MgF 2 (110) with SnO 2 [001] || MgF 2 [001]. The Hall mobility of the 660 °C-deposited film was 21 cm 2 V −1 s −1 with a carrier concentration of 3.9 × 10 17 cm −3 . The average transmittance of the 660 °C-deposited film in the visible range is 93% and the optical band gap is estimated as 3.89 eV. [ABSTRACT FROM AUTHOR]