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Seamless Staircase Electrical Contact to Semiconducting Graphene Nanoribbons.
- Source :
-
Nano Letters . Oct2017, Vol. 17 Issue 10, p6241-6247. 7p. - Publication Year :
- 2017
-
Abstract
- Electrical contact to low-dimensional (low-D) materials is a key to their electronic applications. Traditional metal contacts to low-D semiconductors typically create gap states that can pin the Fermi level (EF). However, low-D metals possessing a limited density of states at EF can enable gate-tunable work functions and contact barriers. Moreover, a seamless contact with native bonds at the interface, without localized interfacial states, can serve as an optimal electrode. To realize such a seamless contact, one needs to develop atomically precise heterojunctions from the atom up. Here, we demonstrate an all-carbon staircase contact to ultranarrow armchair graphene nanoribbons (aGNRs). The coherent heterostructures of width-variable aGNRs, consisting of 7, 14, 21, and up to 56 carbon atoms across the width, are synthesized by a surface-assisted self-assembly process with a single molecular precursor. The aGNRs exhibit characteristic vibrational modes in Raman spectroscopy. A combined scanning tunneling microscopy and density functional theory study reveals the native covalent-bond nature and quasi-metallic contact characteristics of the interfaces. Our electronic measurements of such seamless GNR staircase constitute a promising first step toward making low resistance contacts. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GRAPHENE
*FERMI level
*NANORIBBONS
*ELECTRONIC structure
*NANOSTRUCTURED materials
Subjects
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 17
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 126072138
- Full Text :
- https://doi.org/10.1021/acs.nanolett.7b02938