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Boosting the kesterite Cu2ZnSnS4 solar cells performance by diode laser annealing.
- Source :
-
Solar Energy Materials & Solar Cells . Feb2018, Vol. 175, p71-76. 6p. - Publication Year :
- 2018
-
Abstract
- In this work, a novel diode laser annealing was performed as a post-sulfurization heat treatment on pure-sulfide Cu 2 ZnSnS 4 thin film solar cells fabricated by sputtering deposition. The effect on both film quality and device performance after annealing at various laser doses was investigated. After receiving an ultra-fast laser scan treatment, the crystallinity of the CZTS film can be improved and the Cu/Zn disordering is reduced. The power conversion efficiency of the laser annealed device was boosted to 7.33%, compared with the reference cell efficiency of 6.72%. The major increase in the short circuit current is driving force of such improvement, from 18 mA/cm 2 to 19.31 mA/cm 2 after laser treatment. These results indicate that the quality of CZTS thin films and the device performance can be effectively improved by the diode laser annealing. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09270248
- Volume :
- 175
- Database :
- Academic Search Index
- Journal :
- Solar Energy Materials & Solar Cells
- Publication Type :
- Academic Journal
- Accession number :
- 126104413
- Full Text :
- https://doi.org/10.1016/j.solmat.2017.10.009