Back to Search
Start Over
Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules.
- Source :
-
IEEE Transactions on Power Electronics . Feb2018, Vol. 33 Issue 2, p1075-1086. 12p. - Publication Year :
- 2018
-
Abstract
- Insulated-gate bipolar transistor (IGBT) short-circuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, the concept of 3-D safe operating area is proposed as the IGBT's operational boundary to divide the device short-circuit failure modes into short-circuit $V_{{\rm{DC}}}/ V_{{\rm{rated}}}\hbox{--} I_{{\rm{SC}}}$ SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the device 3-D short-circuit safe operating area (3D-SCSOA) characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependence research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode research works of IGBT stands and is heading is provided. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 33
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 126135213
- Full Text :
- https://doi.org/10.1109/TPEL.2017.2682114