Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon.

MLA

Wang, Peng, et al. “Growth and Ripening of Oxygen Precipitation in Neutron-Irradiated Czochralski Silicon.” Materials Science in Semiconductor Processing, vol. 74, Feb. 2018, pp. 369–74. EBSCOhost, https://doi.org/10.1016/j.mssp.2017.11.010.

APA

Wang, P., Cui, C., Yu, X., & Yang, D. (2018). Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon. Materials Science in Semiconductor Processing, 74, 369–374. https://doi.org/10.1016/j.mssp.2017.11.010

Chicago

Wang, Peng, Can Cui, Xuegong Yu, and Deren Yang. 2018. “Growth and Ripening of Oxygen Precipitation in Neutron-Irradiated Czochralski Silicon.” Materials Science in Semiconductor Processing 74 (February): 369–74. doi:10.1016/j.mssp.2017.11.010.