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Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs.
- Source :
-
Thin Solid Films . Dec2017, Vol. 644, p41-44. 4p. - Publication Year :
- 2017
-
Abstract
- This research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I CP ) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I CP second hump region increases with channel length, yet is not affected by channel width. The cross-sectional view of the L-gate structure along the width direction demonstrates that a part of the poly gate area near the body contact is covered by a P + implant, inducing a parasitic channel under the P + poly gate. This parasitic channel leads to the abnormal Gm and I CP hump, and such mechanism is further verified by body floating devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 644
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 126391883
- Full Text :
- https://doi.org/10.1016/j.tsf.2017.09.052