Electron spin resonance study of the effect of applied stress during thermal oxidation of (1 1 1)Si on inherent Pb interface defects

An electron spin resonance study has been carried out on the effect of in situ applied in-plane stress to (1 1 1)Si substrates during oxidation on the formation of inherent Pb (Si3&z.tbnd6;Si<f>⋅</f>; Si dangling bond) interface defects in (1 1 1)Si/SiO2. Analysis for various, both compressive and tensile, stress levels reveals the properties of these electrically active point defects to be significantly affected, in particular their incorporated inherent density and signal shape. Interestingly, the inherent Pb density is reduced by applied tensile stress, with an opposite result for compressive. The data support the commonly accepted relationship between inherent incorporation of the Pb defects and Si/SiO2 interface mismatch. [Copyright &y& Elsevier]