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Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation.

Authors :
Zhang, Yanwen
Xue, Haizhou
Zarkadoula, Eva
Sachan, Ritesh
Ostrouchov, Christopher
Liu, Peng
Wang, Xue-lin
Zhang, Shuo
Wang, Tie Shan
Weber, William J.
Source :
Current Opinion in Solid State & Materials Science. Dec2017, Vol. 21 Issue 6, p285-298. 14p.
Publication Year :
2017

Abstract

Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In the intermediate energy regime, energetic particles simultaneously deposit a significant amount of energy to both electronic and atomic subsystems of silicon carbide (SiC). Here we show that defect evolution in SiC closely depends on the electronic-to-nuclear energy loss ratio ( S e / S n ), nuclear stopping powers ( dE / dx nucl ), electronic stopping powers ( dE / dx ele ), and the temporal and spatial coupling of electronic and atomic subsystem for energy dissipation. The integrated experiments and simulations reveal that: (1) increasing S e / S n slows damage accumulation; (2) the transient temperatures during the ionization-induced thermal spike increase with dE / dx ele , which causes efficient damage annealing along the ion trajectory; and (3) for more condensed displacement damage within the thermal spike, damage production is suppressed due to the coupled electronic and atomic dynamics. Ionization effects are expected to be more significant in materials with covalent/ionic bonding involving predominantly well-localized electrons. Insights into the complex electronic and atomic correlations may pave the way to better control and predict SiC response to extreme energy deposition. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13590286
Volume :
21
Issue :
6
Database :
Academic Search Index
Journal :
Current Opinion in Solid State & Materials Science
Publication Type :
Academic Journal
Accession number :
126479142
Full Text :
https://doi.org/10.1016/j.cossms.2017.09.003