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Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition.
- Source :
-
Ceramics International . Feb2018, Vol. 44 Issue 3, p3122-3127. 6p. - Publication Year :
- 2018
-
Abstract
- Heteroepitaxial growth of conductive Si-doped β-Ga 2 O 3 films on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) was successfully performed. The effect of Si content on the structural, morphological, electrical and optical properties of Si-doped β-Ga 2 O 3 films was investigated in detail. Distinctive surface morphology evolution of films depending on Si content was observed and presented. The Si-doped β-Ga 2 O 3 films exhibited high transmittance in the ultraviolet-visible regions. The temperature-dependent PL was carried out especially to discuss the photoluminescence properties of Si-doped β-Ga 2 O 3 films. More importantly, the results suggested that the conductivity of heteroepitaxial Si-doped β-Ga 2 O 3 films by MOCVD could be realized and controlled by adjusting the Si content. The minimum resistivity of 1.79×10 −1 Ω·cm was obtained for the films grown under the SiH 4 flow rate of 0.08 sccm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 44
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 126636103
- Full Text :
- https://doi.org/10.1016/j.ceramint.2017.11.079